http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5409 -2.6a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 1 of 4 top view a l c b d g h j f k e 1 2 3 1 2 3 s c - 59 top view rohs compliant product a suffix of -c specifies halogen and lead-free description the SMG5409 provide the designer with best combinat ion of fast switching, low on-resistance and cost-effec tiveness. the SMG5409 is universally preferred for all commer cial-industrial surface mount applications and suited for low volta ge applications such as dc/dc converters. features simple drive requirement small package outline marking 5409 package information absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 2 t a =25c i d -2.6 a t a =70c -2 pulsed drain current 1 i dm -12 a power dissipation t a =25c p d 1.38 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 2 r ja 90 c / w notes: 1. pulse width limited by max. junction temperatur e. 2. surface mounted on 1 in 2 copper pad of fr4 board; 270 /w when mounted on min. copper pad. package mpq leader size sc-59 3k 7 inch ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0.10 r ef. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5409 -2.6a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250ua gate-threshold voltage v gs(th) -1.0 - -3.0 v v ds =v gs , i d = -250ua gate-body leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - -1 a v ds = -30v, v gs =0 - - -5 v ds = -24v, v gs =0 drain-source on-resistance 1 r ds(on) - - 120 m v gs = -10v, i d = -2.6a - - 170 v gs = -4.5v, i d = -2.0a forward transconductance g fs - 4 - s v ds = -5v, i d = -2.5a dynamic total gate charge 1 q g - 5 8 nc v ds = -24v, v gs = -4.5v, i d = -2.6a gate-source charge q gs - 1 - gate-drain charge q gd - 3 - turn-on delay time 1 t d(on) - 8 - ns v ds = -15v, v gs = -10v, r g =3.3 , r d =15 , i d = -1a rise time t r - 5 - turn-off delay time t d(off) - 20 - fall time t f - 7 - input capacitance ciss - 412 660 pf v gs =0, v ds = -25v, f=1.0mhz output capacitance coss - 91 - reverse transfer capacitance crss - 62 - source-drain diode diode forward voltage 1 v sd - - -1 v i s = -1a, v gs =0 reverse recovery time 1 t rr - 16.8 - ns i s = -2.6a, v gs =0 di/dt=100a/ s reverse recovery charge q rr - 10 - nc notes: 1. pulse width Q 300us, duty cycle Q 2%.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5409 -2.6a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5409 -2.6a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 4 of 4 characteristic curves
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